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Entegris (NASDAQ:ENTG), a global leader in advanced materials science, and the U.S. Department of Commerce have signed a non-binding Preliminary Memorandum of Terms (PMT) for up to $75 million in proposed direct funding to Entegris under the CHIPS and Science Act. This funding would support the development of a state-of-the-art facility in Colorado Springs designed to create products critical to the future of semiconductor manufacturing in the U.S.
Entegris is among the first suppliers in the semiconductor industry to enter into a PMT with the U.S. Department of Commerce under this federal initiative. Its new manufacturing center of excellence in Colorado Springs will support the company's Advanced Materials Handling (AMH) and Microcontamination Control (MC) divisions. Upon completion, the facility will increase production capabilities for Front-Opening-Unified Pods (FOUPs), an essential product that transports and protects silicon wafers during the semiconductor manufacturing process, as well as advanced liquid filtration and purification products.
"Today marks an important moment in the effort to strengthen the U.S. semiconductor manufacturing infrastructure," said Bertrand Loy, president and chief executive officer at Entegris. "We have been a strategic partner to semiconductor companies for over 50 years and are proud to be among the first suppliers in the semiconductor industry to receive this important federal support. We made the decision to expand our presence in the U.S. and to help to create a stronger and more resilient domestic semiconductor ecosystem."
Entegris' new advanced manufacturing center will also bolster Colorado's position as a major technology hub and significantly contribute to the local economy and job market. The facility is expected to create approximately 600 new jobs in Colorado Springs over the next several years, spanning roles from entry-level manufacturing to engineering and operational leadership. Approximately 500 construction jobs are also expected to be created by 2030.
Posted In: ENTG
